We investigate the physics and technology of resistive memories (ReRAM) based on metal oxides formed either from continuous thin films or nanoparticle assemblies. The material and device fabrication is performed in a high vacuum system in the Clean Room Laboratory of the Dept. of Physics of NTUA. We perform electrical characterization of the device as well as material characterization.

We collaborate with Asis. Prof. Leonidas Tsetseris for DFT calculations and the Department of Microelectronics/NCSR Demokritos for device scaling (Dr. P. Normand group) and Electron Microscopy (Dr. A. Travlos group)