We investigate thermal processes including ultra fast thermal processing of semiconductors that can result in diffusionless dopant atom processing with high electrical activation. Main application is currently the investigation of damage annealing, dopant diffusion and activation following ion impantation in silicon and germanium.

For that purpose we collaborate with the Laser laboratory of the Dept. of Physics of NTUA and the Laser Thermal lab of the Univesrity of Berkeley (Prof. C. Grigoropoulos).